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AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. Standard Product AO8820 is Pb-free (meets ROHS & Sony 259 specifications). AO8820L is a Green Product ordering option. AO8820 and AO8820L are electrically identical.
Features
VDS (V) = 20V ID = 7A (VGS = 10V) RDS(ON) < 21m (VGS = 10V) RDS(ON) < 24m (VGS = 4.5V) RDS(ON) < 32m (VGS = 2.5V) RDS(ON) <50m (VGS = 1.8V) ESD Rating: 2000V HBM
D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2
D2
G1
G2
S1
S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 20 12 7 5.5 25 1.5 0.96 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 64 89 53
Max 83 120 70
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO8820 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250uA VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=7A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=6.6A VGS=2.5V, ID=5.5A VGS=1.8V, ID=2A gFS VSD IS Forward Transconductance VDS=5V, ID=7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 12 0.5 25 16.5 23.1 19 25 35 25 0.75 2.5 615 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 150 120 0.9 8.5 VGS=4.5V, VDS=10V, ID=7A 1.2 3 7 VGS=5V, VDS=10V, RL=1.4, RGEN=3 IF=7A, dI/dt=100A/s IF=7A, dI/dt=100A/s
2
Min 20
Typ
Max
Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current
1 5 10 0.65 1 21 24 32 50
A A V V A
m
S 1 V A pF pF pF 12 nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
13 29 11 15 5
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0: June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8820 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 10V 20 3V 4V 20 ID(A) ID(A) 10 125C 25C 0 0 1 2 3 4 5 VDS(Volts) Figure 1: On-Regions Characteristics 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics VGS =2V 15 VGS=5V
10
VGS =1.5V
5
50 40 RDS(ON)(m) 30
VGS =1.8V VGS =2.5V Normalize ON-Resistance
1.6
VGS=1.8V ID=2A VGS=4.5V ID=5A VGS=2.5V ID=4A VGS=10V
1.4
VGS =4.5V 20 10 0 0 5 10 15 20 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS =10V
1.2 ID=7A
1.0
0.8 0 50 100 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
80 70 60 RDS(ON)(m) 50 40 30 20 10 0 2 4 6 8 10 25C 125C IS(A) ID=7A
1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 VSD(Volts) Figure 6: Body-Diode Characteristics 25C 125C
VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO8820 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400 VDS=10V 4 VGS(Volts) 3 2 1 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics
5
ID=7A
1200 Capacitance (pF) 1000 800 600 400 200 0 0 5 10 15 20 VDS(Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss
100
TJ(Max)=150C, TA=25C 10s Power (W)
40 TJ(Max)=150C TA=25C
30
10 ID (Amps) 100s 1ms RDS(ON) limited 0.1 0.1 1 10 DC 10s 10ms 100m 1s 100
20
1
10
0 0.001
VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=83C/W
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.01
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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